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TD62S051AFM

Part Number	TD62S051AFM
Manufacturer	Toshiba Semiconductor
Description	TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic
Published	Dec 27, 2006
Detailed Description	www.DataSheet4U.com TD62S051AFM TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62S051AFM 1-Channel Da...
Datasheet	TD62S051AFM PDF File

Overview

www.
DataSheet4U.
com TD62S051AFM TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62S051AFM 1-Channel Darlington Sink-Current Driver The TD62S051AFM is a 1-channel noninverting sink-current driver with a PNP transistor at the first stage and a NPN Darlington transistor at the second stage.
The driver incorporates output clamp diodes used to clamp the counter electromotive force which is generated when driving an inductive load.
Because the driver operates by source input current, it is optimal for interfacing with sink-current driven general-purpose CMOS logic ICs and microprocessors.
Also it is optimal for driving relays and LEDs.
When using the driver, pay attention to the thermal conditions.
Weight: 0.
017 g (typ.
) Features · · · · · · Ultra-small HSON6 package with heat sink on rear High output withstandard voltage: VCE (SUS) = 50 V (min) Large output current: IOUT = 500 mA (max) Built-in input resistor: RIN = 14 kΩ Input signal: Low Level Active Built-in output clamp diodes Pin Connection (top view) Basic Circuit Diagram VCC 7 k9 INPUT 14 kW OUTPUT 1 6 INPUT COMMON VCC 2 5 P-GND 3 4 GND 7.
2 k9 2.
7 k9 COMMON OUTPUT 3 k9 GND P-GND Note 1: Diodes shown using dotted lines are parasitic.
Do not use them.
Note 2: When using the driver, connect the P-GND pin to the GND pin.
Note 3: When using the driver, connect the P-GND pin to the heat sink on the rear of the package.
1 2001-12-05 TD62S051AFM Maximum Ratings (Ta = 25°C) Characteristics Supply voltage Collector-emitter voltage Output withstand voltage Output current Input voltage Input current Clamp diode reverse voltage Clamp diode forward current Power dissipation Symbol VCC VCEO VCE (SUS) IOUT VIN IIN VR IF PD (Note 4) Rth (j-a) (Note 4) Saturated thermal resistance Rth (j-c) (Note 5) Operating temperature Storage temperature Topr Tstg 25 -40~85 -55~150 °C °C Rating -0.
5~7.
0 50 50 500 -0.
5~7.
0 -10 50 500 0.
78 160 °C/W Unit V V V mA V mA V mA W Note 4: 114.
3 ´ 76.
2 ´ 1.
6 mm gla...

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TD62S051AFM TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic - Toshiba Semiconductor

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