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IRF7NA2907

Part Number	IRF7NA2907
Manufacturer	International Rectifier
Description	HEXFET POWER MOSFET SURFACE MOUNT
Published	Dec 29, 2006
Detailed Description	www.DataSheet4U.com PD - 94337B HEXFET® POWER MOSFET SURFACE MOUNT (SMD-2) IRF7NA2907 75V, N-CHANNEL Product Summary...
Datasheet	IRF7NA2907 PDF File

Overview

www.
DataSheet4U.
com PD - 94337B HEXFET® POWER MOSFET SURFACE MOUNT (SMD-2) IRF7NA2907 75V, N-CHANNEL Product Summary Part Number IRF7NA2907 BVDSS 75V RDS(on) ID 0.
0045Ω 75A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
SMD-2 Features: n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max.
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Package Mounting Surface Temp.
Weight * Current is limited by package For footnotes refer to the last page 75* 75* 300 250 2.
0 ±20 500 75 25 6.
4 -55 to 150 300 (for 5s) 3.
3 (Typical) Units A W W/°C V mJ A mJ V/ns o C g www.
irf.
com 1 02/18/02 IRF7NA2907 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS / ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 75 — — 2.
0 130 — — — — — — — — —...

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IRF7NA2907 HEXFET POWER MOSFET SURFACE MOUNT - International Rectifier

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