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IXBT42N170A

IXYS Corporation
Part Number IXBT42N170A
Manufacturer IXYS Corporation
Description Monolithic Bipolar MOS Transistor
Published Jan 10, 2007
Detailed Description Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N170A IXB...
Datasheet PDF File IXBT42N170A PDF File

IXBT42N170A
IXBT42N170A

Overview
Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N170A IXBH42N170A VCES = IC90 = VCE(sat) tfi ≤ = 1700V 21A 6.
0V 20ns Symbol VCES VCGR VGES VGEM IC25 IICCM90 SSOA (RBSOA) T(SSCC SOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TTCC = = 90°C 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load VRGGE==1105ΩV, ,nVonCErSe=p1e2ti0tiv0eV, TJ = 125°C TC = 25°C 1.
6mm (0.
062 in.
) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 1700 1700 V V ± 20 V ± 30 V 42 A 21 A 265 A ...


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