DatasheetsPDF.com

BTA06C

ST Microelectronics
Part Number BTA06C
Manufacturer ST Microelectronics
Description Standard Triacs
Published Jan 10, 2007
Detailed Description www.DataSheet4U.com BTA06 B/C BTB06 B/C STANDARD TRIACS . . . FEATURES HIGH SURGE CURRENT CAPABILITY COMMUTATION : (d...
Datasheet PDF File BTA06C PDF File

BTA06C
BTA06C


Overview
www.
DataSheet4U.
com BTA06 B/C BTB06 B/C STANDARD TRIACS .
.
.
FEATURES HIGH SURGE CURRENT CAPABILITY COMMUTATION : (dV/dt)c > 5 V/µs BTA Family : INSULATING VOLTAGE= 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB06 B/C triac family are high performance glass passivated PNPN devices.
These parts are suitables for general purpose applications where high surge current capability is required.
Application such as phase control and static switching on inductive or resistive load.
ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I2t value Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs Parameter BTA BTB Tc = 100 °C Tc = 105 °C tp = 8.
3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.
5 mm from case Parameter 400 VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 400 BTA / BTB06-.
.
.
B/C 600 600 700 700 800 800 V 63 60 18 10 50 - 40 to + 150 - 40 to + 125 260 °C °C °C A2s A/µs A Value 6 Unit A A1 A2 G TO220AB (Plastic) ITSM I2t dI/dt Symbol Unit March 1995 1/5 www.
DataSheet4U.
com BTA06 B/C / BTB06 B/C THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient BTA BTB Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) BTA BTB Parameter Value 60 4.
4 3.
2 3.
3 2.
4 °C/W Unit °C/W °C/W Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant B IGT VD=12V (DC) RL =33Ω Tj=25°C I-II-III IV VGT VGD tgt IL VD=12V (DC) RL =33Ω Tj=25°C Tj=110°C Tj=25°C Tj=25°C I-II-III-IV I-II-III-IV I-II-III-IV I-III-IV II IH * VTM * IDRM IRRM dV/dt * IT= 500mA gate open ITM= 8.
5A tp= 380µs VDRM VRRM Rated Rated Tj=25°C Tj=25°C Tj=2...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)