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+35.5dBm TYPICAL OUTPUT POWER 17.5dB TYPICAL POWER GAIN AT 2GHz 0.5 X 7200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 120mA PER BIN RANGE
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EFA720A
Low Distortion ...
