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NTD4810NH

ON Semiconductor
Part Number NTD4810NH
Manufacturer ON Semiconductor
Description Power MOSFET
Published Jan 17, 2007
Detailed Description www.DataSheet4U.com NTD4810NH Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS(on) to ...
Datasheet PDF File NTD4810NH PDF File

NTD4810NH
NTD4810NH

Overview
www.
DataSheet4U.
com NTD4810NH Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices http://onsemi.
com V(BR)DSS 30 V RDS(on) MAX 10 mW @ 10 V 16.
7 mW @ 4.
5 V D ID MAX 54 A Applications • CPU Power Delivery • DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (RqJA) (Note 1) Power Dissipation (RqJA) (Note 1) Continuous Drain Current (RqJA) (Note 2) Power Dissipation (RqJA) (Note 2) Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) (Note 1) Pulsed Drain Current tp=10ms Current Limited by Package TA = 25°C TA = 85°C TA = 25°C TA = 25°C Steady State TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmaxPkg TJ, Tstg IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 "20 10.
8 8.
4 2.
0 8.
6 6.
7 1.
28 54 42 50 120 45 −55 to 175 41 6.
0 66 W A A YWW 48 10NHG °C A V/ns mJ 4 Drain W A W 1 2 A 3 DPAK CASE 369C (Bent Lead) STYLE 2 Unit V V A 4 G N−Channel S 4 4 1 2 3 3 IPAK IPAK CASE 369AC CASE 369D (Straight Lead) (Straight Lead DPAK) 2 3 1 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW 48 10NHG 4 Drain YWW 48 10NHG Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (VDD = 24 V, VGS = 10 V, L = 0.
3 mH, IL(pk) = 21 A, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 2 1 2 3 1 Drain 3 Gate Source Gate Drain Source 1 2 3 Gate Drain Source Y WW 4810NH G = Year = Work Week = Device Code = Pb−Free Package TL 260 °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the R...


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