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BGF1901-10

NXP
Part Number BGF1901-10
Manufacturer NXP
Description GSM1900 EDGE power module
Published Jan 19, 2007
Detailed Description www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1901-10 GSM1900 EDGE power module Product specificat...
Datasheet PDF File BGF1901-10 PDF File

BGF1901-10
BGF1901-10

Overview
www.
DataSheet4U.
com DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1901-10 GSM1900 EDGE power module Product specification Supersedes data of 2003 Nov 17 2004 Oct 11 Philips Semiconductors Product specification GSM1900 EDGE power module FEATURES • Typical GSM EDGE performance at a supply voltage of 26 V: – Output power = 3.
5 W – Gain = 26.
5 dB – Efficiency = 19 % – ACPR < −63 dBc at 400 kHz – rms EVM < 1.
2 % – peak EVM < 3.
6 %.
• Low distortion to a CDMA signal • Excellent 2-tone performance • Low die temperature due to copper flange • Integrated temperature compensated bias • 50 Ω input/output system • Flat gain over frequency band.
APPLICATIONS • Base station RF power amplifiers in the ...


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