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IXFR34N80

IXYS Corporation
Part Number IXFR34N80
Manufacturer IXYS Corporation
Description Single MOSFET Die Avalanche Rated
Published Jan 19, 2007
Detailed Description www.DataSheet4U.com HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) Single MOSFET Die Avalanche ...
Datasheet PDF File IXFR34N80 PDF File

IXFR34N80
IXFR34N80


Overview
www.
DataSheet4U.
com HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) Single MOSFET Die Avalanche Rated Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight 1.
6 mm (0.
063 in.
) from case for 10 s 50/60 Hz, RMS t = 1 min Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C (MOSFET chip capability) TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C IXFR 34N80 VDSS = 800 ID25 = 28 RDS(on) = 0.
24 trr ≤ 250 ns V A Ω Maximum Ratings 800 800 ± 20 ± 30 28 600 150 60 3 5 400 -55 .
.
.
+150 150 -55 .
.
.
+150 300 2500 5 V V V V A A A mJ J V/ns ISOPLUS 247TM E153432 G D S Isolated backside* G = Gate S = Source D = Drain * Patent pending Features W °C °C °C °C V~ g l l l l l l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low dra...



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