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FS300R12KF4

eupec GmbH
Part Number FS300R12KF4
Manufacturer eupec GmbH
Description IGBT
Published Jan 21, 2007
Detailed Description www.DataSheet4U.com European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FS 300 R 1...
Datasheet PDF File FS300R12KF4 PDF File

FS300R12KF4
FS300R12KF4

Overview
www.
DataSheet4U.
com European PowerSemiconductor and Electronics Company GmbH + Co.
KG Marketing Information FS 300 R 12 KF4 61,5 13 61,5 M6 31,5 190 57 171 U V W CX CU 2,8x0,5 5,5 26,4 5 3x5=15 GX EX EU GU CY CV 3,35 CZ CW 4 deep 7 GY EY EV GV GZ EZ EW GW + Cu Gu Eu Cx Gx Ex Cv Gv Ev Cy Gy Ey + Cw Gw Ew Cz Gz Ez external connection + to be done U V W - external connection to be done VWK, May 1996 IGBT-Module Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung Kollektor-Dauergleichstrom Periodischer Kollektor Spitzenstrom Gesamt-Verlustleistung Gate-Emitter-Spitzenspannung Dauergleichstrom Periodischer Spitzenstrom Isolations-Prüfspannung collector-emitter voltage DC-collector current repetitive peak collector current total power dissipation gate-emitter peak voltage DC forward current repetitive peak forw.
current insulation test voltage tp=1ms RMS, f=50 Hz, t= 1 min.
tp=1 ms tC=25°C, Transistor /transistor VCES IC ICRM Ptot VGE IF IFRM VISOL FS 300 R 12 KF4 1200 V 300 A 600 A 2000 W +/- 20 V 300 A 600 A 2,5 kV min.
typ.
2,7 3,3 5,5 22 0,35 0,45 0,9 1,0 0,10 0,15 max.
3,2 V 3,9 V 6,5 V - nF 5 mA 50 mA 400 nA 400 nA - µs - µs - µs - µs - µs - µs Charakteristische Werte / Characteristic values: Transistor Kollektor-Emitter Sättigungsspannung Gate-Schwellenspannung Eingangskapazität Kollektor-Emitter Reststrom Gate-Emitter Reststrom Emitter-Gate Reststrom Einschaltzeit (induktive Last) collector-emitter saturation voltage gate threshold voltage input capacity collector-emitter cut-off current gate leakage current gate leakage current turn-on time (inductive load) iC=300A, vGE=15V, t vj=25°C iC=300A, vGE=15V, t vj=125°C iC=12mA, vCE=vGE, tvj=25°C fO=1MHz,tvj=25°C,vCE=25V,vGE=0V vCE=1200V, vGE=0V, t vj=25°C vCE=1200V, vGE=0V, t vj=125°C vCE=0V, vGE=20V, t vj=25°C vCE=0V, vEG=20V, t vj=25°C iC=300A,vCE=600V vL= ±15V,R G=6,8Ω, tvj=25°C vL= ±15V,R G=6,8Ω, tvj=125°C Speicherzei...


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