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IRLR110A

Fairchild Semiconductor
Part Number IRLR110A
Manufacturer Fairchild Semiconductor
Description Power MOSFET
Published Jan 21, 2007
Detailed Description www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower...
Datasheet PDF File IRLR110A PDF File

IRLR110A
IRLR110A

Overview
www.
DataSheet4U.
com $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.
) @ VDS = 100V ♦ Lower RDS(ON): 0.
336Ω (Typ.
) IRLR/U110A BVDSS = 100 V RDS(on) = 0.
44Ω ID = 4.
7 A D-PAK 2 1 3 1 I-PAK 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * Total Power Dissipation (TC=25°C) Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8 from case for 5-seconds (2) (1) (1) (3) (1) Value 100 4.
7 3 16 ±20 58 4.
7 2.
2 6.
5 2.
5 22 0.
18 - 55 to +150 Units V A A V mJ A mJ V/ns W W W/°C °C 300 Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ.
---Max.
5.
6 50 110 °C/W Units * When mounted on the minimum pad size recommended (PCB Mount).
Rev.
B ©1999 Fairchild Semiconductor Corporation 1 IRLR/U110A Electrical Characteristics (TC=25°C unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ( Miller ) Charge Min.
Typ.
Max.
Units 100 -1.
0 ---------------...


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