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IXTP02N50D

IXYS Corporation
Part Number IXTP02N50D
Manufacturer IXYS Corporation
Description High Voltage MOSFET
Published Jan 23, 2007
Detailed Description High Voltage Power MOSFET N-Channel IXTY02N50D IXTU02N50D IXTP02N50D D VDSX = ID25 =  RDS(on) 500V 200mA 30 TO-...
Datasheet PDF File IXTP02N50D PDF File

IXTP02N50D
IXTP02N50D


Overview
High Voltage Power MOSFET N-Channel IXTY02N50D IXTU02N50D IXTP02N50D D VDSX = ID25 =  RDS(on) 500V 200mA 30 TO-252 (IXTY) G S Symbol VDSX VDGX VGSX VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJ TC = 25C TA = 25C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting Torque (TO-220) TO-252 TO-251 TO-220 Maximum Ratings 500 V 500 V 20 V 30 V 200 mA 800 mA 25 W 1.
1 W - 55 .
.
.
+150 C 150 C - 55 .
.
.
+150 C 300 °C 260 °C 1.
13 / 10 Nm/lb.
in.
0.
35 g 0.
40 g 3.
00 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS = -10V, ID = 25A VGS(off) VDS = 25V, ID = 25A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = -10V RDS(on) ID(on) VGS = 0V, ID = 50mA, Note 1 VGS = 0V, VDS = 25V, Note 1 TJ = 125C Characteristic Values Min.
Typ.
Max.
500 V - 2.
5 - 5.
0 V 100 nA 10 A 250 A 20 30  250 mA G S TO-251 (IXTU) D (Tab) G D S D (Tab) TO-220AB (IXTP) GD S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features • Normally ON Mode • International Standard Packages • Low RDS(on) HDMOSTM Process • Rugged Polysilicon Gate Cell Structure • Fast Switching Speed Advantages • Easy to Mount • Space Savings • High Power Density Applications • Level Shifting • Triggers • Solid State Relays • Current Regulators © 2017 IXYS CORPORATION, All Rights Reserved DS98861C(5/17) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 50V, ID = 200mA, Note 1 Ciss Coss Crss VGS = -10V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = 5V, VDS = 100V, ID = 50mA RG = 30 (External) RthJC RthCS TO-220 IXTY02N50D Characteristic Values Min.
Typ.
Max.
100 150 mS 120 pF 25 pF 5 pF 9 ns 4 ns 28 ns 45 ns 5.
0 C/W 0.
50 C/W IXTU02N50D IXTP02N50D Sou...


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