Advanced Power MOSFET
Description
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$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 1.185Ω (Typ.)
IRLW/I610A
BVDSS = 200 V RDS(on) = 1.5Ω ID = 3.3 A
D2-...
Fairchild Semiconductor
IRLI610A PDF File
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