(IRFI550A / IRFW550A) Advanced Power MOSFET
Description
www.DataSheet4U.com
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 Ω (Typ.)
Ο
IRFW/I550A
BVDSS = 100 V RDS(on) = 0.04 Ω ID = 40 A
D2-PAK
2
I2-...
Similar Datasheet