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BLF4G10LS-120

NXP
Part Number BLF4G10LS-120
Manufacturer NXP
Description UHF power LDMOS transistor
Published Feb 7, 2007
Detailed Description www.DataSheet4U.com BLF4G10LS-120 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product p...
Datasheet PDF File BLF4G10LS-120 PDF File

BLF4G10LS-120
BLF4G10LS-120

Overview
www.
DataSheet4U.
com BLF4G10LS-120 UHF power LDMOS transistor Rev.
01 — 10 January 2006 Product data sheet 1.
Product profile 1.
1 General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1: Typical performance f = 920 MHz to 960 MHz; Th = 25 °C; in a class-AB production test circuit; typical values.
Mode of operation CW GSM EDGE 2-tone [1] [2] VDS (V) 28 28 28 PL (W) 120 48 (AV) Gp ηD (dB) (%) 19 19 57 40 46 ACPR400 (dBc) −61 [1] - ACPR600 (dBc) −72 [2] - EVM (%) 1.
5 - IMD3 (dBc) −31 120 (PEP) 19 ACPR400 at 30 kHz resolution bandwidth ACPR600 at 30 kHz resolution bandwidth CAUTION This device is sensitive to Elect...


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