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BLF4G10S-120

NXP
Part Number BLF4G10S-120
Manufacturer NXP
Description UHF power LDMOS transistor
Published Feb 7, 2007
Detailed Description www.DataSheet4U.com BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet ...
Datasheet PDF File BLF4G10S-120 PDF File

BLF4G10S-120
BLF4G10S-120

Overview
www.
DataSheet4U.
com BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor Rev.
01 — 10 January 2006 Product data sheet 1.
Product profile 1.
1 General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1: Typical performance RF performance at Th = 25 °C in a common base class-AB test circuit.
Mode of operation CW 2-tone [1] [2] f (MHz) VDS (V) PL (W) 120 48 (AV) Gp (dB) (typ) 19 19 ηD (%) 57 40 46 ACPR400 ACPR600 EVMrms IMD3 (dBc) (dBc) (dBc) (%) (typ) (typ) (typ) −61 [1] −72 [2] 1.
5 −31 861 to 961 28 861 to 961 28 GSM EDGE 861 to 961 28 120 (PEP) 19 ACPR400 at 30 kHz resolution bandwidth ACPR600 at 30 kHz resolution bandwidth CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features s Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V and an IDq of 850 mA: x Load power = 48 W (AV) x Gain = 19 dB (t...


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