DatasheetsPDF.com

TC55NEM208AFTV

Toshiba Semiconductor
Part Number TC55NEM208AFTV
Manufacturer Toshiba Semiconductor
Description STATIC RAM
Published Feb 9, 2007
Detailed Description www.DataSheet4U.com TC55NEM208AFPV/AFTV55,70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,28...
Datasheet PDF File TC55NEM208AFTV PDF File

TC55NEM208AFTV
TC55NEM208AFTV

Overview
www.
DataSheet4U.
com TC55NEM208AFPV/AFTV55,70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55NEM208AFPV/AFTV is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits.
Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.
7 to 5.
5 V power supply.
Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz (typ) and a minimum cycle time of 55 ns.
It is automatically placed in low-power mode at 1 µA standby current (typ) when chip enable ( CE ) is asserted high.
There are two control inputs.
CE is used to select the device and for data retention control, and output enable ( OE ) provides fast memory access.
This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required.
And, with a guaranteed operating range of −40° to 85°C,...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)