GaAs Infrared Emitting Diode
Description
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SEP8506
GaAs Infrared Emitting Diode
FEATURES Side-emitting plastic package
50ยก (nominal) beam angle 935 nm wavelength Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger
INFRA-20.TIF
DESCRIPTION The SEP8506 is a gallium arsenide infrared emitting diod...
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