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HY57V121620LT

Hynix Semiconductor
Part Number HY57V121620LT
Manufacturer Hynix Semiconductor
Description Synchronous DRAM
Published Feb 22, 2007
Detailed Description www.DataSheet4U.com HY57V121620(L)T 4 Banks x 8M x 16Bit Synchronous DRAM DESCRIPTION The HY57V121620 is a 512-Mbit CMO...
Datasheet PDF File HY57V121620LT PDF File

HY57V121620LT
HY57V121620LT

Overview
www.
DataSheet4U.
com HY57V121620(L)T 4 Banks x 8M x 16Bit Synchronous DRAM DESCRIPTION The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.
HY57V121620 is organized as 4banks of 8,388,608x16.
HY57V121620 is offering fully synchronous operation referenced to a positive edge of the clock.
All inputs and outputs are synchronized with the rising edge of the clock input.
The data paths are internally pipelined to achieve very high bandwidth.
All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of c...


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