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MRF5S19100HR3

Part Number	MRF5S19100HR3
Manufacturer	Motorola
Description	The RF MOSFET Line RF Power Field Effect Transistors
Published	Feb 26, 2007
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19100H Rev. 4, 5/2006 RF Power Field...
Datasheet	MRF5S19100HR3 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRF5S19100H Rev.
4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
• Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 22 Watts Avg.
, Full Frequency Band.
IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.
2288 MHz.
PAR = 9.
8 dB @ 0.
01% Probability on CCDF.
Power Gain — 13.
9 dB Drain Efficiency — 25.
5% IM3 @ 2.
5 MHz Offset — - 36.
5 dBc in 1.
2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset — - 50.
7 dBc in 30 kHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant • In Tape and Reel.
R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
MRF5S19100HR3 MRF5S19100HSR3 1930- 1990 MHz, 22 W AVG.
, 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF5S19100HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF5S19100HSR3 Table 1.
Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.
5, +65 - 0.
5, +15 269 1.
54 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2.
Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 75°C, 100 W CW Case Temperature 70°C, 22 W CW Symbol RθJC Value (1) 0.
64 0.
65 Unit °C/W 1.
Refer to AN1955, Thermal Measurement Methodolo...

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