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IXTC13N50

IXYS Corporation
Part Number IXTC13N50
Manufacturer IXYS Corporation
Description Power MOSFET
Published Feb 27, 2007
Detailed Description www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Chann...
Datasheet PDF File IXTC13N50 PDF File

IXTC13N50
IXTC13N50

Overview
www.
DataSheet4U.
com ADVANCE TECHNICAL INFORMATION Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXTC 13N50 VDSS = 500 V ID25 = 12 A RDS(on) = 0.
4 Ω ISOPLUS 220TM Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Weight 1.
6 mm (0.
062 in.
) from case for 10 s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ± 20 ± 30 12 48 13 18 5 140 -55 .
.
.
+150 150 -55 .
.
.
+150 300 3 V V V V A A A mJ V/ns W °C °C °C °C g l l l l G D S G = Gate, S = Source * Patent pending Isolated back surface* D = Drain, Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Applications l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
500 2 4 ± 100 TJ = 25°C TJ = 125°C 200 1 0.
4 V V l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 2.
5 mA VGS = ±20 VDC, VDS = 0 VDS = 0.
8 VDSS VGS = 0 V V GS = 10 V, ID = IT Notes 1, 2 l l DC-DC converters Batterychargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages nA µA mA Ω l l l l Easy assembly: no screws or isolation foils required Space savings High power density Low collector capacitance to ground (low EMI) © 2001 IXYS All rights reserved 98823 (05/01) IXTC 13N50 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
7.
5 9.
0 2800 V GS = 0 V, VDS = 25 V, f = 1 MHz 300 70 18 V GS = 10 V, VDS = 0.
5 VDSS, ID = 0.
5 ID25, RG = 4.
7 Ω (External) 27 32 110 V GS = 10 V, ...


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