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SIA811DJ

Vishay Siliconix
Part Number SIA811DJ
Manufacturer Vishay Siliconix
Description P-Channel 20-V (D-S) MOSFET
Published Mar 13, 2007
Detailed Description www.DataSheet4U.com SPICE Device Model SiA811DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode CHARAC...
Datasheet PDF File SIA811DJ PDF File

SIA811DJ
SIA811DJ

Overview
www.
DataSheet4U.
com SPICE Device Model SiA811DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS.
The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive.
The saturated output impedance is best fit at the gate bias near the ...


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