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SI5509DC

Vishay Siliconix
Part Number SI5509DC
Manufacturer Vishay Siliconix
Description N-/P-Channel MOSFET
Published Mar 19, 2007
Detailed Description Si5509DC Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 20 0.052...
Datasheet PDF File SI5509DC PDF File

SI5509DC
SI5509DC

Overview
Si5509DC Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 20 0.
052 at VGS = 4.
5 V 0.
084 at VGS = 2.
5 V 0.
090 at VGS = - 4.
5 V P-Channel - 20 0.
160 at VGS = - 2.
5 V ID (A)a 6.
1a 4.
8a - 4.
8a - 3.
6a Qg (Typ.
) 3.
9 nC 3.
8 nC 1206-8 ChipFET® FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Complementary MOSFET for Portable Devices - Ideal for Buck-Boost Circuits 1 S1 D1 D1 G1 S2 D2 G2 D2 D1 Marking Code ED XXX Lot Traceability G1 and Date Code Part # Code S2 G2 Bottom View Ordering Information: Si5509DC-T1-E3 (Lead (Pb)-free) Si5509DC-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage Gate-Source Voltage VDS 20 - 20 VGS ± 12 V TC = 25 °C 6.
1a - 4.
8a Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 4.
9a 5.
0b, c - 3.
8a - 3.
9b, c TA = 70 °C 3.
9b, c - 3.
1b, c A Pulsed Drain Current IDM 10 - 15 Source Drain Current Diode Current TC = 25 °C TA = 25 °C IS 3.
7 1.
7b, c - 3.
7 - 1.
7b, c TC = 25 °C 4.
5 4.
5 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 2.
88 2.
1b, c 2.
88 2.
1b, c W TA = 70 °C 1.
33b, c 1.
33b, c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg - 55 to 150 °C 260 THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Typ.
Max.
Typ.
Max.
Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Foot (Drain) t≤5s Steady State RthJA RthJF 50 60 50 60 30 40 30 40 °C/W Notes: a.
Based on TC = 25 °C.
b.
Surface mounted on 1" x 1" FR4 board.
c.
t = 5 s.
d.
See Reliability Manual for profile.
The ChipFET is a leadless package.
The end of the lead terminal is exposed copper (not plated) as a result of the s...


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