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SI5941DU

Vishay Siliconix
Part Number SI5941DU
Manufacturer Vishay Siliconix
Description Dual P-Channel 8-V (D-S) MOSFET
Published Mar 21, 2007
Detailed Description www.DataSheet4U.com SPICE Device Model Si5941DU Vishay Siliconix Dual P-Channel 8-V (D-S) MOSFET CHARACTERISTICS • P-Ch...
Datasheet PDF File SI5941DU PDF File

SI5941DU
SI5941DU

Overview
www.
DataSheet4U.
com SPICE Device Model Si5941DU Vishay Siliconix Dual P-Channel 8-V (D-S) MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS.
The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive.
The saturated output impedance is best fit at the gate bias near the threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model.
All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact ph...


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