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FDB2614

Part Number	FDB2614
Manufacturer	Fairchild Semiconductor
Description	N-Channel MOSFET
Published	Mar 27, 2007
Detailed Description	FDB2614 — N-Channel PowerTrench® MOSFET November 2013 FDB2614 N-Channel PowerTrench® MOSFET 200 V, 62 A, 27 mΩ Featur...
Datasheet	FDB2614 PDF File

Overview

FDB2614 — N-Channel PowerTrench® MOSFET November 2013 FDB2614 N-Channel PowerTrench® MOSFET 200 V, 62 A, 27 mΩ Features • RDS(on) = 22.
9 mΩ ( Typ.
)@ VGS = 10 V, ID = 31 A • High Performance Trench technology for Extremely Low RDS(on) • Low Gate Charge • High Power and Current Handing Capability General Description This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications • Synchronous Rectification • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies D D G S D2-PAK G S Absolute Maximum Ratings TC = 2...

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