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FDFMA2N028Z

Fairchild Semiconductor
Part Number FDFMA2N028Z
Manufacturer Fairchild Semiconductor
Description Integrated N-Channel PowerTrench MOSFET and Schottky Diode
Published Mar 27, 2007
Detailed Description FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky Diode July 2014 FDFMA2N028Z Integrated N-Channel Powe...
Datasheet PDF File FDFMA2N028Z PDF File

FDFMA2N028Z
FDFMA2N028Z

Overview
FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky Diode July 2014 FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 20V, 3.
7A, 68mΩ Features General Description MOSFET „ Max rDS(on) = 68mΩ at VGS = 4.
5V, ID = 3.
7A „ Max rDS(on) = 86mΩ at VGS = 2.
5V, ID = 3.
3A „ HBM ESD protection level > 2kV (Note 3) Schottky „ VF < 0.
37V @ 500mA „ Low profile - 0.
8 mm maximum - in the new package MicroFET 2x2 mm „ RoHS Compliant This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications.
It features a MOSFET with low on-state resistance, and an independently connected schottky dio...


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