DatasheetsPDF.com

2STW1695

ST Microelectronics
Part Number 2STW1695
Manufacturer ST Microelectronics
Description High Power PNP Epitaxial Planar Bipolar Transistor
Published Mar 27, 2007
Detailed Description www.DataSheet4U.com 2STW1695 High power PNP epitaxial planar bipolar transistor General features ■ ■ ■ ■ ■ High break...
Datasheet PDF File 2STW1695 PDF File

2STW1695
2STW1695


Overview
www.
DataSheet4U.
com 2STW1695 High power PNP epitaxial planar bipolar transistor General features ■ ■ ■ ■ ■ High breakdown voltage VCEO = -140V Complementary to 2STW4468 Typical ft =20MHz Fully characterized at 125 oC In compliance with the 2002/93/EC European Directive 2 1 3 Applications ■ TO-247 Audio power amplifier Description The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology.
The resulting transistor shows good gain linearity behaviour.
Recommended for 70W to 100W high fidelity audio frequency amplifier output stage.
Internal schematic diagram Order codes Part Number 2STW1695 Marking 2STW1695 Package TO-247 Packing ...



Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)