N-Channel PowerTrench MOSFET
Description
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FDD8586/FDU8586 N-Channel PowerTrench® MOSFET
January 2007
FDD8586/FDU8586 N-Channel PowerTrench® MOSFET
20V, 35A, 5.5mΩ Features General Description
Max rDS(on) = 5.5mΩ at VGS = 10V, ID = 35A Max rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 33A Low gate charge: Qg(TOT) = 34nC(Typ), VGS = 10V Low gate resistance 100% Avalanche tested ...
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