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RD07MVS2

Mitsubishi Electric Semiconductor
Part Number RD07MVS2
Manufacturer Mitsubishi Electric Semiconductor
Description Silicon MOSFET Power Transistor
Published Apr 5, 2007
Detailed Description www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 0...
Datasheet PDF File RD07MVS2 PDF File

RD07MVS2
RD07MVS2

Overview
www.
DataSheet4U.
com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 0.
2+/-0.
05 (0.
22) (0.
22) (0.
25) RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.
6.
0+/-0.
15 This device have an interal monolithic zener diode from gate to source for ESD protection.
4.
9+/-0.
15 4.
6+/-0.
05 3.
3+/-0.
05 0.
8+/-0.
05 1 1.
0+/-0.
05 2 FEATURES •High power gain: Pout>7W, Gp>10dB @Vdd=7.
2V,f=520MHz •High Efficiency: 60%typ.
(175MHz) •High Efficiency: 55%typ.
(520MHz) •Integrated gate protection diode 3 (0.
25) IN...


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