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K4M28163LH

Part Number	K4M28163LH
Manufacturer	Samsung semiconductor
Description	Mobile SDRAM
Published	Apr 13, 2007
Detailed Description	K4M28163LH - R(B)N/G/L/F 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 2.5V power supply. • LVCMOS compatible w...
Datasheet	K4M28163LH PDF File

Overview

K4M28163LH - R(B)N/G/L/F 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 2.
5V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-.
CAS latency (1, 2 & 3).
-.
Burst length (1, 2, 4, 8 & Full page).
-.
Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-.
PASR (Partial Array Self Refresh).
-.
Internal TCSR (Temperature Compensated Self Refresh) -.
DS (Driver Strength) • DQM for masking.
• Auto refresh.
• • • • 64ms refresh period (4K cycle).
Commerc...

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