DatasheetsPDF.com

HE8051

UTC
Part Number HE8051
Manufacturer UTC
Description LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
Published Apr 14, 2007
Detailed Description UNISONIC TECHNOLOGIES CO., LTD HE8051 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  ...
Datasheet PDF File HE8051 PDF File

HE8051
HE8051

Overview
UNISONIC TECHNOLOGIES CO.
, LTD HE8051 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC HE8051 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications.
 FEATURES * Collector current up to 1.
5A * Collector-Emitter voltage up to 25 V * complimentary to UTC HE8551  ORDERING INFORMATION Order Number Lead Free Halogen Free HE8051L-x-T92-B HE8051G-x-T92-B HE8051L-x-T92-K HE8051G-x-T92-K Package TO-92 TO-92 Pin Assignment 123 EBC EBC Packing Tape Box Bulk  MARKING www.
unisonic.
com.
tw Copyright © 2014 Unisonic Technologies Co.
, Ltd 1 of 4 QW-R201-046.
D HE8051 NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Dissipation (TA=25°C) PC 1 W Collector Current IC 1.
5 A Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Current Gain Bandwidth Product Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(SAT) VBE(SAT) VBE fT Cob  CLASSIFICATION OF hFE2 TEST CONDITIONS IC=100A, IE=0 IC=2mA, IB=0 IE=100A, IC=0 VCB=35V, IE=0 VEB=6V, IC=0 VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=1V, IC=10mA VCE=10V, I...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)