RF Power Field Effect Transistor
Description
Freescale Semiconductor Technical Data
Document Number: MRF6P23190H Rev. 2, 3/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL a...
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