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T2322B

ON Semiconductor
Part Number T2322B
Manufacturer ON Semiconductor
Description Sensitive Gate Triacs Silicon Bidirectional Thyristors
Published Apr 18, 2007
Detailed Description T2322B Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for ac power switching. The gate sensit...
Datasheet PDF File T2322B PDF File

T2322B
T2322B

Overview
T2322B Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for ac power switching.
The gate sensitivity of these triacs permits the use of economical transistorized or integrated circuit control circuits, and it enhances their use in low-power phase control and load-switching applications.
Features http://onsemi.
com • • • • • Very High Gate Sensitivity Low On-State Voltage at High Current Levels Glass-Passivated Chip for Stability Small, Rugged Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability Pb−Free Package is Available* TRIACS 2.
5 AMPERES RMS 200 VOLTS MT2 G MT1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (Note 1) (TJ = 25 to 110°C, Gate Open) On-State RMS Current (TC = 70°C) (Full Cycle Sine Wave 50 to 60 Hz) Peak Non−Repetitive Surge Current (One Full Cycle, Sine Wave 60 Hz, TC = 70°C) Circuit Fusing Consideration (t = 8.
3 ms) Peak Gate Power (Pulse Width ≤ 10 ms, TC = 70°C) Average Gate Power (t = 8.
3 ms, TC = 70°C) Peak Gate Current (Pulse Width = 10 ms, TC = 70°C) Operating Junction Temperature Range Storage Temperature Range Mounting Torque (6-32 Screw) (Note 2) Symbol VDRM, VRRM IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg − Value 200 2.
5 25 2.
6 10 0.
5 0.
5 −40 to +110 −40 to +150 8.
0 Unit V A 3 A A2s W W A °C °C in.
lb.
Y WW T2322B G = Year = Work Week = Device Code = Pb−Free Package YWW T 2322BG 2 1 TO−225AA (formerly TO−126) CASE 077 STYLE 5 www.
DataSheet4U.
com MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1.
VDRM and VRRM for all types can be applied on a continuous basis.
Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are excee...


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