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IRFU120ZPBF

Part Number	IRFU120ZPBF
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Apr 25, 2007
Detailed Description	Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l R...
Datasheet	IRFU120ZPBF PDF File

Overview

Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
PD - 95772B IRFR120ZPbF IRFU120ZPbF HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 190mΩ ID = 8.
7A S D-Pak I-Pak ...

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IRFU120ZPBF Power MOSFET - International Rectifier

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