DatasheetsPDF.com

AP2312GN

Advanced Power Electronics
Part Number AP2312GN
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published May 3, 2007
Detailed Description AP2312GN Pb Free Plating Product Advanced Power Electronics Corp. ▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ ...
Datasheet PDF File AP2312GN PDF File

AP2312GN
AP2312GN

Overview
AP2312GN Pb Free Plating Product Advanced Power Electronics Corp.
▼ Capable of 2.
5V gate drive ▼ Lower on-resistance ▼ Surface mount package S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 50mΩ 4.
3A Description SOT-23 G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial applications.
D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage www.
DataSheet4U.
com Parameter Rating 20 ±12 Units V V A A A W W/ ℃ ℃ ℃ Cont...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)