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FDAF69N25

Fairchild Semiconductor
Part Number FDAF69N25
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published May 3, 2007
Detailed Description FDAF69N25 250V N-Channel MOSFET September 2005 UniFET FDAF69N25 250V N-Channel MOSFET Features • 34A, 250V, RDS(on) = ...
Datasheet PDF File FDAF69N25 PDF File

FDAF69N25
FDAF69N25


Overview
FDAF69N25 250V N-Channel MOSFET September 2005 UniFET FDAF69N25 250V N-Channel MOSFET Features • 34A, 250V, RDS(on) = 0.
041Ω @VGS = 10 V • Low gate charge ( typical 77 nC) • Low Crss ( typical 84 pF) • Fast switching • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters and switched mode power supplies.
D { z G{ G D S   z z TO-3PF FQAF Series www.
DataSheet4U.
com { S Absolute Maximum Ratings Symbol VDSS VDS(Avalanche) ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Repetitive Avalanche Voltage Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Parameter (Note 1) (Note 2) FDAF69N25 250 300 34 21.
5 (Note 1) Unit V V A A A V mJ A mJ V/ns W W/°C °C °C - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed 136 ±30 (Note 2) (Note 1) (Note 1) (Note 3) 1894 34 11.
5 4.
5 115 0.
93 -55 to +150 300 (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Min.
-0.
24 -- Max.
1.
08 -40 Unit °C/W °C/W °C/W ©2005 Fairchild Semiconductor Corporation 1 www.
fairchildsemi.
com FDAF69N25 Rev.
A FDAF69N25 250V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDAF69N25 Device FDAF69N25 Package TO-3PF Reel Size -- Tape Width -- Quantity 30 Elect...



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