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FDB14N30

Fairchild Semiconductor
Part Number FDB14N30
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published May 3, 2007
Detailed Description FDB14N30 — N-Channel UniFETTM MOSFET FDB14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 m Features • RDS(on) = 290 m...
Datasheet PDF File FDB14N30 PDF File

FDB14N30
FDB14N30

Overview
FDB14N30 — N-Channel UniFETTM MOSFET FDB14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 m Features • RDS(on) = 290 m (Max.
) @ VGS = 10 V, ID = 7 A • Low Gate Charge (Typ.
18 nC) • Low Crss (Typ.
17 pF) • 100% Avalanche Tested • Improved dv/dt Capability Applications • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.
This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D G S D2-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (T...


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