N-Channel MOSFET
Description
FDB33N25 / FDI33N25 250V N-Channel MOSFET
FDB33N25 / FDI33N25
250V N-Channel MOSFET Features
33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V Low gate charge ( typical 36.8 nC) Low Crss ( typical 39 pF) Fast switching 100% avalanche tested Improved dv/dt capability
UniFET
Description
May 2006
TM
These N-Channel enhancement mode power field effect tra...
Fairchild Semiconductor
FDI33N25 PDF File
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