FDMS5672 N-Channel UltraFET Trench® MOSFET
FDMS5672 N-Channel UltraFET Trench® MOSFET
60V, 22A, 11.5mΩ
March 2015
Features
General Description
Max rDS(on) = 11.5mΩ at VGS = 10V, ID = 10.6A Max rDS(on) = 16.5mΩ at VGS = 6V, ID = 8A Typ Qg = 32nC at VGS = 10V Low Miller Charge Optimized Efficiency at High Frequencies RoHS Compliant
UItraFET d...
