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FJY3005R

Fairchild Semiconductor
Part Number FJY3005R
Manufacturer Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Published May 4, 2007
Detailed Description FJY3005R NPN Epitaxial Silicon Transistor November 2006 FJY3005R NPN Epitaxial Silicon Transistor Features • Switching...
Datasheet PDF File FJY3005R PDF File

FJY3005R
FJY3005R

Overview
FJY3005R NPN Epitaxial Silicon Transistor November 2006 FJY3005R NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.
7KΩ, R2=10KΩ) • Complement to FJY4005R tm Eqivalent Circuit C C E S05 B E B SOT - 523F Absolute Maximum Ratings * Symbol VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Ta = 25°C unless otherwise noted Parameter Value 50 50 www.
DataSheet4U.
com Units V V V mA °C °C mW 10 100 -55~150 150 200 TSTG TJ PC Storage Temperature Range Junction Temperature Collector Power Dissipation, by RθJA * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics* T =25°C unless otherwise noted a Symbol RθJA * Minimum land pad size.
Parameter Thermal Resistance, Junction to Ambient Max 600 Units °C/W Electrical Characteristics* Symbol V(BR)CBO V(BR)CEO ICBO hFE VCE(sat) fT Ccb VI(off) VI(on) R1 R1/R2 TC = 25°C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain - Bandwidth Product Output Capacitance Test Condition IC = 10 uA, IE = 0 IC = 100 uA, IB = 0 VCB = 40 V, IE = 0 VCE = 5 V, IC = 5 mA IC = 10 mA, IB = 0.
5 mA VCE = 10V, IC = 5 mA VCB = 10 V, IE = 0, f = 1.
0 MHz VCE = 5 V, IC = 100uA VCE = 0.
3V, IC = 20mA MIN 50 50 Typ MAX Units V V 0.
1 30 0.
3 250 3.
7 0.
3 2.
5 3.
2 0.
42 4.
7 0.
47 6.
2 0.
52 uA V MHz pF V V KΩ Input Off Voltage Input On Voltage Input Resistor Resistor Ratio * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation 1 www.
fairchildsemi.
com FJY3005R Rev.
A FJY3005R NPN Epitaxial Silicon Transistor Typical Performance Characteristics Figure 1.
DC current Gain 1000 Figure 2.
Input On Voltage 100 V CE = 5V R 1 = 4.
7K R 2 = 10K 100 VCE =0.
3V R1...


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