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CEG8205

Part Number	CEG8205
Manufacturer	CET
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
Published	May 6, 2007
Detailed Description	CEG8205 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 4.5A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) ...
Datasheet	CEG8205 PDF File

Overview

CEG8205 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 4.
5A, RDS(ON) = 30mΩ @VGS = 4.
5V.
RDS(ON) = 40mΩ @VGS = 2.
5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TSSOP-8 for Surface Mount Package.
G2 S2 S2 D D S1 S1 G1 1 2 3 4 8 D 7 S2 6 S2 5 G2 G1 S1 S1 D TSSOP-8 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C ±10 4.
5 25 1.
0 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Ch...

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