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CEH3456

CET
Part Number CEH3456
Manufacturer CET
Description N-Channel Enhancement Mode Field Effect Transistor
Published May 6, 2007
Detailed Description CEH3456 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 5.5A, RDS(ON) = 42mΩ @VGS = 10V. RDS(ON) = 59mΩ...
Datasheet PDF File CEH3456 PDF File

CEH3456
CEH3456

Overview
CEH3456 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 5.
5A, RDS(ON) = 42mΩ @VGS = 10V.
RDS(ON) = 59mΩ @VGS = 4.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
4 5 6 3 2 1 TSOP-6 S(4) G(3) D(1,2,5,6,) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C ±20 5.
5 20 2.
0 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 6...


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