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CEU6601

CET
Part Number CEU6601
Manufacturer CET
Description P-Channel MOSFET
Published May 7, 2007
Detailed Description P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -16A, RDS(ON) = 86mΩ RDS(ON) = 125mΩ @VGS = -10V. @VGS...
Datasheet PDF File CEU6601 PDF File

CEU6601
CEU6601

Overview
P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -16A, RDS(ON) = 86mΩ RDS(ON) = 125mΩ @VGS = -10V.
@VGS = -4.
5V.
CED6601/CEU6601 Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -60 Units V V A A W W/ C C ±20 -16 -64 42 0.
33 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3 50 Units C/W C/W Details are subject to change without notice .
1 Rev 2.
2006.
Oct http://www.
cetsemi.
com CED6601/CEU6601 Electrical...


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