NPN Darlington Transistor
Description
ZTX614
ZTX614
NPN Darlington Transistor
These device is designed for applications requiring extremely high gain at collector currents to 0.5A and high breakdown voltage. Sourced from process 06.
C BE
TO-226
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Volt...
Fairchild Semiconductor
ZTX614 PDF File
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