DatasheetsPDF.com

CA3096A

Intersil
Part Number CA3096A
Manufacturer Intersil
Description NPN/PNP Transistor Arrays
Published May 9, 2007
Detailed Description CA3096, CA3096A, CA3096C December 1997 NPN/PNP Transistor Arrays Description The CA3096C, CA3096, and CA3096A are gener...
Datasheet PDF File CA3096A PDF File

CA3096A
CA3096A


Overview
CA3096, CA3096A, CA3096C December 1997 NPN/PNP Transistor Arrays Description The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays.
Each array consists of five independent transistors (two PNP and three NPN types) on a common substrate, which has a separate connection.
Independent connections for each transistor permit maximum flexibility in circuit design.
Types CA3096A, CA3096, and CA3096C are identical, except that the CA3096A specifications include parameter matching and greater stringency in ICBO , ICEO , and VCE(SAT).
The CA3096C is a relaxed version of the CA3096.
Applications • Five-Independent Transistors - Three NPN and - Two PNP • Differential Amplifiers • DC Amplifiers • Sense Amplifiers • Level Shifters • Timers • Lamp and Relay Drivers • Thyristor Firing Circuits • Temperature Compensated Amplifiers • Operational Amplifiers CA3096, CA3096A, CA3096C Essential Differences CHARACTERISTIC V(BR)CEO (V) (Min) CA3096A CA3096 CA3096C Ordering Information PART NUMBER (BRAND) CA3096AE CA3096AM (3096A) CA3096AM96 (3096A) CA3096CE CA3096E CA3096M (3096) CA3096M96 (3096) TEMP.
RANGE (oC) -55 to 125 -55 to 125 -55 to 125 -55 to 125 -55 to 125 -55 to 125 -55 to 125 PACKAGE 16 Ld PDIP 16 Ld SOIC 16 Ld SOIC Tape and Reel 16 Ld PDIP 16 Ld PDIP 16 Ld SOIC 16 Ld SOIC Tape and Reel PKG.
NO.
E16.
3 M16.
15 M16.
15 E16.
3 E16.
3 M16.
15 M16.
15 NPN PNP V(BR)CBO (V) (Min) NPN PNP hFE at 1mA NPN PNP hFE at 100µA PNP ICBO (nA) (Max) NPN PNP 35 -40 35 -40 24 -24 45 -40 45 -40 30 -24 150-500 20-200 150-500 20-200 100-670 15-200 40-250 40-250 30-300 Pinout CA3096, CA3096A, CA3096C (PDIP, SOIC) TOP VIEW 1 2 Q1 3 4 5 6 7 8 Q3 Q2 Q4 Q5 14 13 12 11 10 9 16 15 SUBSTRATE 40 -40 100 -100 100 -100 ICEO (nA) (Max) NPN PNP VCE SAT (V) (Max) NPN |VIO| (mV) (Max) NPN PNP |IIO| (µA) (Max) NPN PNP 0.
6 0.
25 5 5 0.
5 0.
7 0.
7 100 -100 1000 -1000 1000 -1000 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedu...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)