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IRG4CC50WB

International Rectifier
Part Number IRG4CC50WB
Manufacturer International Rectifier
Description IGBT Die
Published May 9, 2007
Detailed Description PD- 91836A IRG4CC50WB IRG4CC50WB IGBT Die in Wafer Form C 600 V Size 5 WARP Speed G E 6" Wafer Electrical Characteri...
Datasheet PDF File IRG4CC50WB PDF File

IRG4CC50WB
IRG4CC50WB

Overview
PD- 91836A IRG4CC50WB IRG4CC50WB IGBT Die in Wafer Form C 600 V Size 5 WARP Speed G E 6" Wafer Electrical Characteristics ( Wafer Form ) Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) 2.
3V Max.
600V Min.
3.
0V Min.
, 6.
0V Max.
250 µA Max.
± 1.
1 µA Max.
Test Conditions IC = 10A, TJ = 25°C, VGE = 15V TJ = 25°C, ICES = 250µA, V GE = 0V VGE = VCE , TJ =25°C, IC =250µA TJ = 25°C, VCE = 600V TJ = 25°C, VGE = +/- 20V Mechanical Data Nominal Backmetal Composition, Thickness: Nominal Front Metal Comp...


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