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IRFZ24VL

International Rectifier
Part Number IRFZ24VL
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published May 11, 2007
Detailed Description PD - 94182 IRFZ24VS IRFZ24VL HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dy...
Datasheet PDF File IRFZ24VL PDF File

IRFZ24VL
IRFZ24VL

Overview
PD - 94182 IRFZ24VS IRFZ24VL HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications D VDSS = 60V RDS(on) = 60mΩ G S ID = 17A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.
The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.
0W in a typical surface mount application.
The through-hole version (IRFZ24VL) is available for low-profile applications.
D2 Pak IRFZ24VS TO-262 IRFZ24VL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V‡ Continuous Drain Current, VGS @ 10V‡ Pulsed Drain Current ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ‡ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
17 12 68 44 0.
29 ± 20 17 4.
4 4.
2 -55 to + 175 300 (1.
6mm from case ) Units A W W/°C V A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient (PCB Mounted)** Typ.
––– ––– Max.
3.
4 40 Units °C/W www.
irf.
com 1 02/14/02 IRFZ24VS/IRFZ24VL Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(o...


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