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NJ14AL

InterFET
Part Number NJ14AL
Manufacturer InterFET
Description Silicon Junction Field-Effect Transistor
Published May 11, 2007
Detailed Description F-4 01/99 NJ14AL Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier ¥ Rf AMP to 1.0 Gh...
Datasheet PDF File NJ14AL PDF File

NJ14AL
NJ14AL

Overview
F-4 01/99 NJ14AL Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier ¥ Rf AMP to 1.
0 Ghz Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.
016" X 0.
016" All Round Bond Pads = 0.
0028" All Square Bond Pads = 0.
004" Substrate is also Gate.
Devices in this Databook based on the NJ14AL Process.
Datasheet IF140, IF140A IF142 www.
DataSheet4U.
com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance NJ14AL Process Min V(BR)GSS IGSS VGS(OFF) IDSS – 0.
5 0.
5 10 – 15 Typ – 22 – 2.
0 – 100 –7 20 Max Unit V pA V mA Test Conditions IG = – 1 µA, VDS = ØV VGS = – 10V, VDS = ØV VGS = 10V, ID = 1 nA VDS = 10V, VGS = ØV gfs Ciss e ¯N 5.
5 2.
3 0.
5 4 mS pF pF ...


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