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NJ26

Part Number	NJ26
Manufacturer	INTERFET
Description	Silicon Junction Field-Effect Transistor
Published	May 11, 2007
Detailed Description	F-8 01/99 NJ26 Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum rat...
Datasheet	NJ26 PDF File

Overview

F-8 01/99 NJ26 Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.
016" X 0.
016" All Bond Pads = 0.
004" Sq.
Substrate is also Gate.
Devices in this Databook based on the NJ26A Process.
Datasheet 2N4416, 2N4416A 2N5484, 2N5485 2N5486 J304, J305 VCR11N www.
DataSheet4U.
com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forw...

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