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IRLIB4343

International Rectifier
Part Number IRLIB4343
Manufacturer International Rectifier
Description DIGITAL AUDIO MOSFET
Published May 15, 2007
Detailed Description PD - 95857A DIGITAL AUDIO MOSFET IRLIB4343 Key Parameters Features l l l l l l l Advanced Process Technology Key ...
Datasheet PDF File IRLIB4343 PDF File

IRLIB4343
IRLIB4343

Overview
PD - 95857A DIGITAL AUDIO MOSFET IRLIB4343 Key Parameters Features l l l l l l l Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDSON for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI 175°C Operating Junction Temperature for Ruggedness Repetitive Avalanche Capability for Robustness and Reliability VDS RDS(ON) typ.
@ VGS = 10V RDS(ON) typ.
@ VGS = 4.
5V Qg typ.
TJ max 55 42 57 28 175 V m: m: nC °C D G S TO-220 Full-Pak Description This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications.
This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI.
Additional features of this MosFET are 175°C operatin...


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