DatasheetsPDF.com

2N5962

Central Semiconductor
Part Number 2N5962
Manufacturer Central Semiconductor
Description NPN SILICON TRANSISTOR
Published May 21, 2007
Detailed Description 2N5961 2N5962 2N5963 SILICON NPN TRANSISTORS TO-92 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL S...
Datasheet PDF File 2N5962 PDF File

2N5962
2N5962

Overview
2N5961 2N5962 2N5963 SILICON NPN TRANSISTORS TO-92 CASE w w w.
c e n t r a l s e m i .
c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5961 series devices are epoxy molded silicon NPN transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain (hFE) and low noise.
MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg 2N5961 2N5962 2N5963 60 45 30 60 45 30 7.
0 50 625 1.
5 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5961 2N5962 SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICBO VCB=Rated VCBO - 2.
0 - 2.
0 ICBO VCB=Rated VCBO, TA=65°C - 50 - 50 IEBO VEB=5.
0V - 1.
0 - 1.
0 BVCBO IC=10μA 60 - 45 - BVCEO IC=5.
0mA 60 - 45 ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)